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2SC3689-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.
The 2SC3689-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It is designed for high Hfe and low-frequency general-purpose amplifier applications. The device features a very small collector capacitance, typically 1.5pF, which supports efficient signal processing in compact circuits. Packaged in a small-sized format, it facilitates space-constrained designs while maintaining reliable performance for driver and muting circuit functions.
Verify the manufacturer origin, as this component is associated with both onsemi and Sanyo/Rochester Electronics. Confirm the specific datasheet version matches the required electrical characteristics. Ensure the package type aligns with PCB layout constraints. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Select this component when high current gain and low input capacitance are critical for low-frequency analog stages. The small physical footprint makes it suitable for dense board layouts. Consider the voltage and current ratings against the specific load requirements of the amplifier or driver stage to ensure safe operating area compliance during operation.
This part belongs to the 2SC3689 series of single bipolar transistors. It is often cross-referenced with Sanyo equivalents. The TB-E suffix indicates specific packaging and tape-and-reel configuration details provided by the manufacturer. It serves as a discrete solution for analog signal conditioning tasks requiring compact form factors.
The typical collector capacitance is 1.5pF.
No, it is specified for low-frequency general-purpose amplifier applications.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.