Single Bipolar Transistors 2SC3689-TB-E product image

2SC3689-TB-E

$0.31
  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*

SKU:8b661ac3ff42 Category: Brand:

  
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2SC3689-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3689-TB-E

  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3689-TB-E

2SC3689-TB-E

Single Bipolar Transistors Overview

The 2SC3689-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It is designed for high Hfe and low-frequency general-purpose amplifier applications. The device features a very small collector capacitance, typically 1.5pF, which supports efficient signal processing in compact circuits. Packaged in a small-sized format, it facilitates space-constrained designs while maintaining reliable performance for driver and muting circuit functions.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial planar silicon construction
  • Optimized for high current gain (Hfe)
  • Low-frequency general-purpose amplifier capability
  • Minimal collector capacitance for signal integrity

Single Bipolar Transistors Applications

  • Low-frequency general-purpose amplifiers
  • Driver circuits
  • Muting circuits

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as this component is associated with both onsemi and Sanyo/Rochester Electronics. Confirm the specific datasheet version matches the required electrical characteristics. Ensure the package type aligns with PCB layout constraints. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low input capacitance are critical for low-frequency analog stages. The small physical footprint makes it suitable for dense board layouts. Consider the voltage and current ratings against the specific load requirements of the amplifier or driver stage to ensure safe operating area compliance during operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3689 series of single bipolar transistors. It is often cross-referenced with Sanyo equivalents. The TB-E suffix indicates specific packaging and tape-and-reel configuration details provided by the manufacturer. It serves as a discrete solution for analog signal conditioning tasks requiring compact form factors.

Single Bipolar Transistors Replacement Considerations

  • 2SC3689-TB-E-SY

Single Bipolar Transistors FAQ

What is the typical collector capacitance value?

The typical collector capacitance is 1.5pF.

Is this transistor suitable for high-frequency RF applications?

No, it is specified for low-frequency general-purpose amplifier applications.

2SC3689-TB-E2SC3689-TB-E
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