2SC3708S-AA

Single Bipolar Transistors Overview

The 2SC3708S-AA is an NPN epitaxial planar silicon transistor manufactured by onsemi. It features a collector-emitter voltage rating of 80V and a continuous collector current capacity of 0.5A. The device has a maximum power dissipation of 600 mW and a transition frequency of 120MHz. DC current gain (hFE) is specified at a minimum of 140 when tested at Ic=50mA and Vce=5V. The component operates within a junction temperature range up to 150°C and utilizes a TO-226-3 or TO-92-3 package.

Single Bipolar Transistors Feature Summary

• NPN epitaxial planar silicon construction for low-frequency driver applications
• High current gain capability suitable for switching and amplification tasks
• Robust thermal performance with high junction temperature tolerance

Single Bipolar Transistors Applications

• Low-frequency driver circuits
• Discrete semiconductor switching applications
• General-purpose amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the package type corresponds to TO-226-3 or TO-92-3 variants. Check date codes for authenticity. Ensure the part number suffix aligns with the requested configuration. Request original datasheets from authorized distributors to validate technical parameters before integration.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring moderate voltage handling and reliable low-frequency operation. Consider the 600 mW power limit when designing thermal management solutions. Evaluate the 120MHz transition frequency against signal requirements. Compare hFE characteristics with circuit biasing needs. Ensure the TO-92/TO-226 footprint fits the target PCB layout constraints.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SC3708 series, designed primarily for discrete semiconductor products. It serves as a standard NPN bipolar junction transistor (BJT) in general electronic circuits. The series provides a balance of voltage rating and current handling for common driver roles. It is widely used in consumer electronics and industrial control modules where cost-effective switching is required.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with similar 80V ratings and 0.5A current capacity. Verify pinout compatibility for TO-92 packages. Check equivalent hFE ranges and power dissipation limits. Consult official substitution lists from onsemi for validated alternatives.