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The Sanyo 2SC3775-4-TB-E is an NPN epitaxial planar silicon transistor designed for ultra-high frequency applications. It functions as a low-noise amplifier and wide-band amplifier in the UHF band. The device features a small outline package with three terminals, constructed from plastic/epoxy material. Key electrical characteristics include a maximum collector current of 0.07 A, a collector-emitter voltage of 12 V, and a minimum DC current gain (hFE) of 40. It operates at temperatures up to 150 °C.
Verify the specific suffix -4-TB-E against official Sanyo documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with RoHS standards if required by the target application. Cross-reference the manufacturer's latest datasheet to validate pinout and thermal resistance parameters before finalizing procurement orders.
Select this component for circuits requiring UHF operation with low noise figures. Compare its cutoff frequency and power gain against similar models like the 2SC3774 or 2SC3776 to ensure suitability for specific frequency bands. Verify that the 12V collector-emitter voltage rating meets the circuit's supply requirements.
This transistor belongs to the 2SC377x series manufactured by Sanyo Semicon Device. The series includes variants such as the 2SC3772, 2SC3773, 2SC3774, and 2SC3776, which share similar UHF oscillator, mixer, and amplifier functionalities. These components are typically used in radio frequency front-end stages.
Potential substitutes within the same family include the 2SC3774 and 2SC3776. Verify electrical parameter alignment, particularly noise figure and cutoff frequency, before substitution.