SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Sanyo 2SC3779D is an NPN epitaxial planar silicon transistor designed for UHF low-noise amplifier applications. It operates within the wide-band amplifier spectrum, specifically targeting frequencies around 0.9 GHz. The device features a small noise figure of 1.5 dB typical at this frequency. Manufactured by Sanyo, it is classified as a bipolar RF transistor suitable for discrete semiconductor products.
Verify component authenticity and datasheet alignment when sourcing. Confirm RoHS status and manufacturer details, as sources may list varying compliance information. Ensure the specific suffix matches required specifications. Check current availability through authorized distributors to guarantee product integrity and proper handling conditions.
Select this component for designs requiring low noise performance in the UHF range. Consider its suitability for wide-band amplification tasks. Evaluate the typical noise figure specification against system requirements. Ensure the package type meets board layout constraints. Review thermal characteristics for the intended operating environment.
This part belongs to the category of bipolar RF transistors manufactured by Sanyo. It is distinct from other series like the 2SC3773, which shares similar application areas but differs in noise figure specifications. The component represents a specialized discrete semiconductor solution for high-frequency signal processing.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components. Consult official manufacturer resources for potential cross-references or updated product line replacements.