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The Panasonic 2SC3829 is a silicon NPN epitaxial planar transistor designed for UHF band low-noise amplification. It operates within a collector-emitter voltage of 10 V and supports a maximum collector current of 80 mA with 200 mW power dissipation. Key electrical parameters include a transition frequency (fT) of 6 GHz, a forward transfer gain (|S21e|^2) of 13.5 dB, and a noise figure (NF) of 2 dB at 800 MHz. The device utilizes a Mini3-G1 package (EIAJ SC-59) to facilitate equipment downsizing and automated insertion.
Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued stages. Confirm that the latest product standards satisfy requirements during the final design stage. Ensure compliance with export control laws if applicable. Consult sales staff for special application information prior to purchasing.
Select this component for circuits requiring low noise figures around 2 dB at 800 MHz. Ensure the operating environment stays within the specified junction temperature range of -55°C to +150°C. Design must respect absolute maximum ratings, particularly the 10 V collector-emitter voltage limit. Consider the SC-59 package dimensions for PCB layout constraints.
This part belongs to the category of silicon NPN transistors intended for general electronic use. It is distinct from automotive or safety-critical components, which require specialized reliability verification. The device is manufactured by Panasonic Electronic Components and complies with the RoHS Directive.
Consult official sources for updated replacement candidates. Verify compatibility regarding pin configuration, package type, and electrical characteristics such as fT and NF before substitution.