2SC3835

Single Bipolar Transistors Overview

The 2SC3835 is a Silicon NPN Triple Diffused Planar Transistor designed for switching applications. It features a collector-emitter breakdown voltage of 120 V and a continuous collector current rating of 7 A. The device operates with a maximum power dissipation of 70 W at 25°C case temperature and supports junction temperatures up to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 70, a typical transition frequency (fT) of 30 MHz, and a collector-base cutoff current of 100 mA maximum.

Single Bipolar Transistors Feature Summary

• Triple diffused planar construction for robust switching performance
• Low collector-emitter saturation voltage for efficient power handling
• High speed switching capability suitable for high-frequency converters

Single Bipolar Transistors Applications

• Humidifier circuits
• DC-DC converter designs
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source when sourcing this component, as multiple distributors may list it. Confirm that the received part matches the MT-100 (TO-3P) package dimensions and pinout configuration. Ensure the datasheet version aligns with the required electrical tolerances for your specific circuit design before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this transistor for applications requiring moderate voltage blocking and high current switching capabilities. The TO-3P package facilitates effective heat dissipation through direct mounting to a heatsink. Consider the thermal resistance characteristics and derating curves when designing for ambient temperatures exceeding 25°C to maintain reliable operation within safe operating area limits.

Single Bipolar Transistors Part Context

This component belongs to Sanken Electric's lineup of silicon NPN power transistors utilizing triple diffused planar technology. It is engineered specifically for general-purpose switching tasks where reliability and thermal stability are critical. The device complements other high-current switching solutions in industrial and consumer electronics power management systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 120V VCEO, 7A IC rating, and TO-3P package. Verify hFE ranges and fT specifications against original design requirements to ensure equivalent switching performance without modification.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 120 V.

What is the typical transition frequency of the 2SC3835?

The typical transition frequency (fT) is 30 MHz under conditions of VCE=12V and IE=-0.5A.

What package type does this transistor use?

The 2SC3835 utilizes the MT-100 package, which corresponds to the TO-3P form factor.