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Product Detailed Parameters
- Description：RF TRANS NPN 20V 1.5GHZ SMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：1.5GHz
- Noise Figure (dB Typ @ f)：4.5dB @ 200MHz
- Gain：-
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：82 @ 10mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3
- Grade：-
- Qualification：-
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Overview
The ROHM 2SC3837KT146P is a high-frequency NPN silicon small-signal transistor designed for UHF band applications. It features a transition frequency (fT) of up to 1500 MHz and a collector-emitter breakdown voltage (BVCEO) of 20 V. The device operates with a maximum collector current of 50 mA and power dissipation of 0.2 W in an SMT3 (SC-59) surface-mount package. Key electrical characteristics include a DC current gain (hFE) range of 82 to 180, output capacitance of 0.9 pF, and a collector-base time constant (rbb'·Cc) of 6 ps.
Feature Summary
- High transition frequency suitable for ultra-high frequency band amplification
- Low noise figure optimized for sensitive signal reception
- Minimized collector-base time constant for superior high-speed performance
Applications
- UHF band amplifier circuits
- General-purpose high-frequency amplification stages
- Communication devices requiring low-noise signal processing
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and hFE grading. Ensure the component meets RoHS compliance requirements for your target assembly process. Confirm that the SMT3 package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring operation at frequencies near 1.5 GHz with minimal signal degradation. Consider its low noise figure for front-end receiver stages. Verify that the 20 V collector-emitter voltage rating accommodates the peak operating voltages in your specific application environment.
Part Context
This transistor belongs to a family of high-frequency amplifiers manufactured by ROHM Semiconductor. It shares design similarities with models such as the 2SC5661, 2SC4725, and 2SC4082, which utilize different package types like VMT3 or EMT3 while maintaining comparable RF performance metrics for general electronic equipment.
Replacement Considerations
The 2SC4725 serves as a functional substitute within the same product family. Both components share identical electrical ratings and are intended for similar high-frequency applications, though they differ in physical package configurations.
