2SC3852A

Single Bipolar Transistors Overview

The Sanken Electric 2SC3852A is a silicon NPN epitaxial planar transistor designed for solenoid and motor drivers, series regulators, and general-purpose applications. It features high DC current gain (hFE) and low collector-emitter saturation voltage (VCE(sat)). Key electrical ratings include a maximum collector current of 6A, a collector-emitter breakdown voltage of 80V, and a maximum power dissipation of 25W at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220F plastic package.

Single Bipolar Transistors Feature Summary

• High DC current gain (hFE) for efficient base drive requirements
• Low collector-emitter saturation voltage (VCE(sat)) to minimize conduction losses
• Robust thermal performance with a maximum junction temperature of 150°C

Single Bipolar Transistors Applications

• Driver for solenoids
• Motor driver circuits
• Series regulator applications
• General purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical tolerances, as variations exist between standard and A-grade versions. Ensure the component matches the required pinout configuration for the target PCB footprint. Cross-reference the absolute maximum ratings with the system's peak operating conditions to prevent overstress during transient events.

Single Bipolar Transistors Selection Notes

Select this component when high hFE and low VCE(sat) are critical for driving inductive loads efficiently. The 80V breakdown voltage suits moderate voltage applications, while the 6A continuous current rating supports substantial load demands. Consider the TO-220F package for through-hole mounting and adequate heat sinking capabilities in space-constrained designs requiring robust thermal management.

Single Bipolar Transistors Part Context

The 2SC3852A belongs to Sanken Electric's lineup of silicon NPN epitaxial planar transistors. It is functionally related to the standard 2SC3852 but offers enhanced specifications, specifically higher minimum hFE and higher breakdown voltages. This variant is optimized for applications requiring reliable switching performance under varying thermal conditions.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include the standard 2SC3852 if lower gain thresholds are acceptable. Verify pin compatibility and thermal resistance characteristics before implementing any alternative components from other manufacturers.

Single Bipolar Transistors FAQ

What is the difference between the 2SC3852 and 2SC3852A?

The 2SC3852A specifies higher minimum DC current gain (hFE) and higher collector-emitter breakdown voltage (V(BR)CEO) compared to the standard 2SC3852.

What is the maximum power dissipation of the 2SC3852A?

The maximum power dissipation is 25W when the case temperature is maintained at 25°C.

What is the operating junction temperature range?

The device supports a storage and operating junction temperature range from -55°C to +150°C.