2SC3927

Single Bipolar Transistors Overview

The 2SC3927 is a Silicon NPN Triple Diffused Planar Transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 550V and a continuous collector current rating of 10A, with a peak pulse current capability of 15A. The device supports a maximum power dissipation of 120W at a case temperature of 25°C. Operating junction temperatures range from -55°C to +150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at IC=5A, a typical transition frequency (fT) of 6MHz, and a maximum collector-base leakage current of 100mA.

Single Bipolar Transistors Feature Summary

• Triple diffused planar silicon construction ensures robust performance in high-voltage environments.
• High collector current capacity suitable for demanding switching regulator loads.
• Wide safe operating area provides reliability under varying thermal and electrical stress conditions.

Single Bipolar Transistors Applications

• Switching regulators
• General purpose high-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the component datasheet against the manufacturer's official documentation to confirm absolute maximum ratings and electrical characteristics. Ensure that the MT-100 (TO-3P) package dimensions align with your PCB footprint requirements. Confirm compliance with RoHS standards if applicable to your manufacturing process. Review the recommended operating conditions to ensure proper heat sinking strategies are implemented for optimal thermal management during operation.

Single Bipolar Transistors Selection Notes

Select this transistor when designing circuits requiring high voltage handling capabilities up to 550V and substantial current switching up to 10A. Consider the thermal resistance characteristics and the need for adequate heatsinking to maintain junction temperatures within the specified limits. Evaluate the switching speed and saturation voltages to ensure compatibility with the desired switching frequency and efficiency targets of the application.

Single Bipolar Transistors Part Context

This component belongs to Sanken Electric's lineup of high-voltage switching transistors. It utilizes triple diffused planar technology to achieve reliable performance in power electronics. The device is intended for use in applications where robustness and high voltage tolerance are critical design parameters.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 550V.

What is the package type for the 2SC3927?

The 2SC3927 uses the MT-100 (TO-3P) package.

Is this component recommended for new designs?

No, the datasheet explicitly states that this component is not recommended for new designs.