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The Panasonic 2SC3930 is a silicon NPN epitaxial planar transistor designed for high-frequency amplification applications. It operates with a collector-emitter voltage of 20 V and a maximum collector current of 30 mA, dissipating up to 150 mW of power. The device features a transition frequency (fT) ranging from 150 MHz to 250 MHz at an emitter current of 1 mA. Packaged in the S-Mini type SC-70 (SMini3-G1) format, it supports downsized equipment designs and automatic insertion via tape packing. The component complies with the RoHS Directive.
Verify the specific ordering suffix against official documentation to confirm pinout and marking details. Confirm the product lifecycle status directly with Panasonic Industry, as this component may be subject to maintenance or discontinuation plans. Ensure compliance with export control regulations if applicable to your region.
Select this component when designing circuits requiring small form factors and high-frequency performance. Verify that the required collector current remains within the 30 mA limit and that the operating voltage does not exceed 20 V. Consider the complementary 2SA1532 PNP transistor for paired circuit configurations.
This transistor belongs to the Panasonic 2SC3930 series of silicon NPN epitaxial planar transistors. It is specifically engineered for high-frequency amplification tasks. The device is housed in the SMini3-G1 package, which corresponds to the EIAJ SC-70 standard, facilitating surface-mount integration.
Consult official manufacturer resources for verified substitute part numbers. No public substitutes are confirmed in the provided datasheet.
The absolute maximum rating for collector-base voltage (V_CBO) with the emitter open is 30 V.
Yes, the 2SC3930 is documented as complementary to the 2SA1532 PNP transistor.
The datasheet provides noise figure data measured at 5 MHz, showing a range of 2.8 dB to 4.0 dB. Specific noise figure values at 100 MHz are not explicitly listed in the summary table.