2SC4083T106N

Overview

The 2SC4083T106N is an NPN silicon high-frequency amplifier transistor manufactured by Rohm Semiconductor. It operates with a collector-emitter voltage of 11V and a maximum collector current of 50mA, dissipating up to 200mW of power. The device features a transition frequency (fT) of 3.2GHz at VCE=10V and IC=5mA. Electrical characteristics include a minimum DC current gain (hFE) of 56, a typical output capacitance (Cob) of 0.8pF, and a noise figure of 3.5dB at 500MHz. It is housed in a UMT3 (SOT-323/SC-70) surface-mount package.

Feature Summary

• High transition frequency for ultra-high frequency signal processing
• Low base resistance and small output capacitance for high gain
• Optimized low noise figure performance

Applications

• UHF/VHF frequency converter circuits
• Local oscillator stages

Procurement Notes

Verify the specific hFE ranking suffix (e.g., NP, Q) against the required gain range before procurement. Confirm that the UMT3 tape-and-reel packaging aligns with automated assembly equipment specifications. Ensure ESD protection measures are integrated into the design due to the component's sensitivity.

Selection Notes

Select this component for applications requiring high-speed switching or amplification within the UHF band. Consider the 11V breakdown voltage limit when designing biasing networks. Evaluate the thermal derating requirements if operating near the 150°C junction temperature limit.

Part Context

This part belongs to the 2SC4083 series of high-frequency transistors designed for compact RF applications. It complements other Rohm devices in similar form factors but offers specific fT and noise characteristics tailored for local oscillators and converters.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering any alternative components.