2SC4094-A

Overview

The CEL 2SC4094-A is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications. It utilizes a direct nitride passivated base surface process to achieve high gain and low noise figure. The device operates from the VHF to UHF bands, providing excellent linearity and a wide dynamic range suitable for small signal amplification.

Feature Summary

• Designed for low-noise and small signal amplification in VHF to UHF frequency bands
• Utilizes direct nitride passivated base surface process for enhanced performance
• Provides high current capability with excellent linearity

Applications

• Microwave low-noise amplifier circuits
• VHF band signal amplification
• UHF band signal amplification

Procurement Notes

Verify component authenticity through authorized channels due to potential obsolescence status. Confirm manufacturing origin as Renesas Electronics or CEL. Check for product change notices regarding material or process updates. Ensure compatibility with existing circuit designs before procurement.

Selection Notes

Select this component for applications requiring low noise figures and high gain in microwave frequencies. Consider the specific biasing requirements for optimal noise performance. Evaluate thermal management needs given the silicon epitaxial construction. Compare against alternative models like the 2SC4093 if different frequency characteristics are required.

Part Context

This part belongs to the 2SC409x series of microwave transistors originally developed by NEC. The series includes variants such as the 2SC4093 and 2SC4095. These components share similar fabrication techniques and application domains, focusing on low-noise amplification in radio frequency systems.

Replacement Considerations

The 2SC4093-A is a documented related part number within the same family. Verify pinout and electrical parameter compatibility before substitution. Check datasheets for differences in noise figure and gain specifications.