2SC4095-A

Overview

The CEL 2SC4095-A is an NPN silicon RF bipolar transistor designed for microwave low-noise amplifier applications. It operates effectively from the VHF band through the UHF band, utilizing a direct nitride passivated base surface process to achieve superior noise performance at high current levels. The device provides excellent associated gain and a wide dynamic range. Key electrical specifications include a typical noise figure of 1.8 dB at 2.0 GHz with a collector-emitter voltage of 6 V and collector current of 5 mA. At the same frequency and voltage but with a collector current of 10 mA, it delivers a typical power gain (|S21e|^2) of 9.5 dB.

Feature Summary

• Employs direct nitride passivated base surface process for enhanced high-current noise figures
• Delivers excellent associated gain and wide dynamic range
• Optimized for low-noise and small signal amplification in VHF to UHF bands

Applications

• Microwave low-noise amplifier circuits
• VHF band signal amplification
• UHF band signal amplification

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet and part identification markings. Confirm that the specific suffix matches the required electrical characteristics, as ordering variations may exist within the product family. Ensure compliance with relevant environmental standards such as RoHS before integration into final assemblies.

Selection Notes

Select this component when designing circuits requiring minimal noise contribution in the VHF and UHF spectrum. Evaluate the operating point carefully, as noise figure and gain vary significantly between 5 mA and 10 mA collector currents. Ensure the biasing network supports the specified 6 V collector-emitter voltage to maintain optimal performance metrics defined in the official documentation.

Part Context

This transistor belongs to a series of NPN silicon epitaxial transistors originally developed using NEC proprietary fabrication techniques. The 2SC4095-A variant is specifically engineered to provide consistent low-noise performance across varying current conditions, making it suitable for precision RF front-end stages where signal integrity is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing pin configurations and electrical parameters against alternative RF transistors from other manufacturers.