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The 2SC4095-T1-A is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications in the VHF to UHF bands. It utilizes a direct nitride passivated base surface process to achieve excellent noise figures at high current values, supporting wide dynamic range and associated gain. Key electrical parameters include a maximum collector-emitter voltage of 10 V, a maximum collector current of 0.035 A, and a minimum DC current gain (hFE) of 125. The device operates up to a maximum junction temperature of 150 °C and features a typical noise figure of 1.8 dB at 2.0 GHz with a collector-emitter voltage of 6 V and collector current of 5 mA.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status as datasheets may indicate non-compliance. Ensure the specific suffix matches the required tape-and-reel packaging configuration for automated assembly processes.
Select this component when low noise figure is critical for VHF/UHF applications. Verify that the 10 V collector-emitter voltage rating meets circuit requirements. Consider the 4-pin Mini Mold package dimensions for PCB layout constraints and thermal management needs during design integration.
This part belongs to the Renesas/NEC 2SC series of RF bipolar transistors. It shares functional similarities with other microwave LNA devices like the 2SC4093, though specific pinouts and electrical limits may vary. The series is characterized by epitaxial silicon construction optimized for high-frequency signal integrity.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with NEC/Renesas internal replacement lists or verify compatibility with similar LNA transistors such as the 2SC2148 or 2SC3356 only after confirming exact electrical parameter alignment.