SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SC4097-R-TP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS NPN 32V 0.5A SOT-323. Review the specifications below when checking this part for your BOM.
The MCC 2SC4097-R-TP is an NPN silicon epitaxial transistor housed in a SOT-323 surface-mount package. It supports a continuous collector current of 500 mA and offers a collector-emitter voltage rating of 32 V, with a collector-base voltage of 40 V and emitter-base voltage of 5 V. The device features a transition frequency of 250 MHz and a maximum power dissipation of 200 mW. DC current gain ranges from 82 to 390 depending on the classification rank. Operating junction temperature spans -55°C to +150°C.
Verify authenticity by purchasing only through authorized Micro Commercial Components distributors or directly from the manufacturer. Unverified sources may supply counterfeit components lacking full traceability. Ensure the ordering suffix matches the required tape-and-reel packaging configuration. Confirm RoHS compliance status before integration into regulated assemblies.
Select this component when a compact NPN transistor with moderate current handling and high-frequency response is required. The SOT-323 package suits space-constrained designs. Evaluate the specific hFE rank (P, Q, or R) needed for circuit gain requirements. Consider the thermal resistance and derating curves for high ambient temperature environments.
This part belongs to the 2SC4097 series of NPN silicon epitaxial transistors manufactured by Micro Commercial Components. It serves as a general-purpose discrete semiconductor device designed for efficient performance in small-signal and switching roles within electronic circuits.
Consult official datasheets for pin-compatible alternatives such as the MMST2222AHE3-TP or similar SOT-323 NPN transistors. Verify that substitute parts meet or exceed the original voltage, current, and frequency specifications before implementation.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 32 V.
Yes, the 'P' suffix designates that the device is lead-free and RoHS compliant.
The transition frequency (fT) is typically 250 MHz at VCE=5V and IC=20mA.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.