2SC4102U3T106R

$0.42

Description：TRANS PNP 120V 0.05A UMT3
Series：-

SKU:7953713ef8db Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

2SC4102U3T106R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 0.05A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4102U3T106R

Description：TRANS PNP 120V 0.05A UMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：390 @ 500mA, 6V
Power - Max：200 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：UMT3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC4102U3T106R

2SC4102U3T106R

Single Bipolar Transistors Overview

The 2SC4102U3T106R is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 120 V and a maximum continuous collector current of 50 mA. The device operates within a junction temperature range up to 150°C and dissipates 200 mW in its SOT-323 (UMT3) surface-mount package. Electrical characteristics include a DC current gain ranging from 180 to 560, a transition frequency of 140 MHz, and a collector-emitter saturation voltage of 500 mV at specified test conditions.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for high-voltage amplifier applications
Complementary pairing with the 2SA1579U3 PNP transistor
Surface-mount construction in a compact UMT3 package

Single Bipolar Transistors Applications

High-voltage amplifier circuits
General-purpose amplification stages
Switching applications requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R or S) required for your design, as the datasheet indicates classification into different gain ranges. Confirm that the application environment remains within standard operating limits, avoiding exposure to corrosive gases, direct sunlight, or extreme humidity. Ensure proper handling precautions are taken due to electrostatic sensitivity during storage and mounting processes.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is needed in a small surface-mount footprint. It serves as the complementary match to the 2SA1579U3. Designers must account for the power dissipation derating based on ambient temperature and ensure the circuit does not exceed the absolute maximum ratings for collector current or junction temperature.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4102 series of high-voltage amplifier transistors produced by ROHM Semiconductor. The 'U3' suffix denotes the SOT-323 (UMT3) package type, while 'T106' specifies the taping packaging format. The series is designed for use in ordinary electronic equipment such as audio-visual and office automation devices.