2SC4116-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SC4116-GR,LF is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It is designed for audio frequency general-purpose amplifier applications. Key electrical ratings include a collector-emitter voltage (Vceo) of 50 V and a maximum collector current (Ic) of 150 mA. The device features a transition frequency (Ft) of 80 MHz and a power dissipation (Pd) of 100 mW. DC current gain (hFE) ranges from 70 to 700, with excellent linearity characteristics. The component operates at junction temperatures up to +125°C and is available in the USM surface-mount package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage and current capability suitable for robust amplifier stages
• Wide DC current gain range ensuring flexibility in circuit design
• Low noise performance optimized for audio signal processing
• Complementary pairing available with the 2SA1586 PNP transistor

Single Bipolar Transistors Applications

• Audio frequency general-purpose amplifiers
• AEC-Q101 qualified automotive electronic circuits
• Low noise pre-amplification stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR against the manufacturer's official documentation to confirm tape-and-reel packaging specifications and binning grades. Ensure the part number matches the exact RoHS compliance status required by your assembly process. Cross-reference the datasheet revision date to confirm technical parameters have not been updated. Confirm AEC-Q101 qualification details directly with Toshiba if automotive reliability standards are mandatory for the application.

Single Bipolar Transistors Selection Notes

Select this component when designing audio circuits requiring high linearity and low noise within a compact surface-mount footprint. The 50 V rating supports moderate voltage swings, while the 150 mA current limit defines the output drive capability. Consider the complementary 2SA1586 for push-pull configurations. Evaluate the thermal management requirements given the 100 mW power dissipation limit in the small USM package.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of small-signal bipolar junction transistors utilizing epitaxial planar technology. It is engineered specifically for audio applications where signal fidelity and low distortion are critical. The device serves as a general-purpose amplifier element, often paired with its PNP counterpart for balanced circuit designs in consumer electronics and automotive systems.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the verified source material. Consult Toshiba sales or authorized distributors for direct equivalents that match the specific electrical and mechanical requirements.