2SC4116SU-Y,LF

Single Bipolar Transistors Overview

The Toshiba 2SC4116SU-Y,LF is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. The device offers a DC current gain (hFE) range of 70 to 700 with excellent linearity. Key electrical parameters include a transition frequency of 80MHz, a collector power dissipation of 100mW, and a low noise figure of 1dB typical. It operates at junction temperatures up to 125°C and is housed in the USM surface-mount package.

Single Bipolar Transistors Feature Summary

• High voltage and high current capability with VCEO of 50V and IC of 150mA
• High DC current gain ranging from 70 to 700 with excellent linearity
• Low noise performance suitable for audio frequency applications
• AEC-Q101 qualified for automotive reliability standards

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifiers
• Automotive electronic circuits requiring AEC-Q101 qualification
• Interface circuits in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix SU-Y against official Toshiba documentation to confirm exact binning or tape-and-reel specifications. Ensure the component matches the required hFE range and noise characteristics for your design. Confirm RoHS compliance status and packaging details directly with the manufacturer or authorized distributors before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high gain and low noise in a small surface-mount package. It serves as a complementary pair to the 2SA1586 PNP transistor. Consider its 50V rating and 150mA current limit when designing amplifier stages. Verify thermal management requirements given the 100mW power dissipation limit in the USM package.

Single Bipolar Transistors Part Context

The 2SC4116 series belongs to Toshiba's lineup of silicon NPN epitaxial transistors designed for audio and general-purpose amplification. These devices are engineered using the PCT process to ensure high reliability and consistent performance. The series includes various packaging options, with the USM package providing a compact solution for space-constrained designs.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SC4116SU-Y,LF are not available in the provided reference data. Consult Toshiba technical support for verified cross-reference information.