2SC4132T100P

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC4132T100P is an NPN silicon power transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 120V and supports a continuous collector current of 1.5A with a peak pulse rating of 2A. The device exhibits a transition frequency of 80MHz and low output capacitance of 20pF, ensuring efficient high-frequency performance. Packaged in the MPT3 (SOT-89) surface-mount format, it offers a maximum power dissipation of 0.5W and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of 120V for robust operation in demanding circuits.
• Low collector output capacitance minimizes switching losses at high frequencies.
• High transition frequency ensures effective signal amplification and fast switching speeds.

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power amplifier stages
• Complementary driver configurations

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100 against the manufacturer's latest documentation to confirm reel quantity and packaging specifications. Ensure compatibility with the MPT3 footprint during PCB layout. Confirm RoHS compliance status through official datasheets before integration into regulated assemblies.

Single Bipolar Transistors Selection Notes

Select this component when a 120V NPN transistor with moderate current handling is required. Compare its 80MHz transition frequency against application bandwidth needs. Consider the MPT3 package thermal characteristics for heat dissipation requirements relative to the 0.5W power limit.

Single Bipolar Transistors Part Context

This NPN transistor complements the PNP 2SB1236, facilitating push-pull or complementary circuit designs. It belongs to ROHM's discrete semiconductor lineup, utilizing silicon planar technology for reliable performance in consumer and industrial electronics requiring stable high-voltage switching.

Single Bipolar Transistors Replacement Considerations

The 2SD1857 serves as a direct functional equivalent with identical pinout and electrical characteristics. Verify that any substitute maintains the same MPT3 package dimensions and thermal resistance values.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 120V.

Does this transistor complement another specific model?

Yes, the 2SC4132 is designed to complement the 2SB1236 PNP transistor.

What is the typical output capacitance?

The typical collector-output capacitance is 20pF at VCB = 10V.