2SC4213-A(TE85L,F)

Single Bipolar Transistors Overview

The Toshiba 2SC4213 is a silicon NPN epitaxial planar transistor utilizing the PCT process, designed for muting and switching applications. It features a collector-emitter voltage of 20 V, a collector current of 300 mA, and power dissipation of 200 mW on FR4 boards. The device offers a high DC current gain ranging from 200 to 1200, a transition frequency of 30 MHz, and an emitter-base voltage of 25 V. Packaged in the SC-70 (SOT-346) format, it weighs approximately 0.006 g.

Single Bipolar Transistors Feature Summary

• High emitter-base breakdown voltage rated at 25 V
• Low on-resistance characteristic with typical value of 1 Ω
• Wide DC current gain range spanning 200 to 1200
• Compact SC-70 surface-mount package

Single Bipolar Transistors Applications

• Audio muting circuits
• General-purpose switching applications
• Portable electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Confirm that the component matches the required thermal derating guidelines for the intended operating temperature range. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards specified by the manufacturer.

Single Bipolar Transistors Selection Notes

Select this component when a small footprint NPN transistor with high gain and elevated emitter-base voltage is required. Consider the 200 mW power dissipation limit and verify thermal management requirements based on the PCB copper pad area. Evaluate the 30 MHz transition frequency to ensure suitability for the target signal bandwidth.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's general-purpose small-signal transistor lineup manufactured using the PCT process. It is engineered for compact designs where space constraints are critical. The part serves as a standard solution for low-power switching and amplification tasks in consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical characteristics carefully before integrating alternative components into existing designs.

Single Bipolar Transistors FAQ

What is the maximum emitter-base voltage rating?

The absolute maximum rating for emitter-base voltage is 25 V.

Does the device support reverse operation?

Yes, the transistor exhibits a typical reverse hFE of 150 under specified test conditions.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.042 V when IC is 30 mA and IB is 3 mA.