2SC4227-T1-A

Overview

The 2SC4227-T1-A is an NPN epitaxial silicon RF transistor designed for high-frequency low-noise amplification in VHF and UHF applications. It utilizes a 3-pin Super Minimold package suitable for high-density surface mount assembly. Key electrical characteristics include a typical noise figure of 1.4 dB, an insertion power gain of 12 dB at 1 GHz, and a gain bandwidth product of 7.0 GHz. The device operates with a maximum collector current of 65 mA and a total power dissipation of 150 mW.

Feature Summary

• Optimized for high-frequency low-noise amplification
• High gain performance at 1 GHz
• Compact 3-pin Super Minimold package

Applications

• VHF low noise amplifier
• UHF low noise amplifier

Procurement Notes

Verify the manufacturer origin carefully, as the part number suffix indicates distribution by CEL but the official datasheet originates from NEC/Renesas Electronics. Confirm the specific quality grade (Standard) required for your application against the manufacturer's classification guidelines before procurement.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1.4 dB and high gain at 1 GHz. Ensure the design accommodates the 150 mW power dissipation limit and the specific biasing conditions of 3 V collector voltage and 7 mA collector current for optimal RF performance.

Part Context

This component belongs to the 2SC4227 series of NPN silicon RF transistors originally developed by NEC Compound Semiconductor Devices. Following the merger on April 1st, 2010, business operations were taken over by Renesas Electronics Corporation, though legacy documentation may still reference the original manufacturer name.

Replacement Considerations

Consult the manufacturer's documentation for direct substitutes. No public confirmed substitute part numbers are available in the provided source material.