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The CEL 2SC4228-T1-A is a silicon NPN epitaxial planar transistor designed for ultra-high frequency (UHF) and very high frequency (VHF) low-noise amplification. It utilizes NESAT™ passivation technology to achieve small reverse transfer capacitance, making it suitable for high-frequency broadband applications. The device operates within a junction temperature range of -65°C to 150°C and features a maximum collector-emitter voltage of 10V. Key electrical characteristics include a characteristic frequency of 8GHz, a noise figure of 1.9dB at 1GHz, and a total power dissipation of 150mW. The DC current gain (hFE) is graded across a range of 40 to 250.
Verify the manufacturer origin carefully, as the 2SC4228 designation was originally developed by NEC Electronics and subsequently transferred to Renesas Electronics following their merger. Ensure that the specific CEL variant matches the required pinout and electrical tolerances defined in the official datasheet before integration into production designs.
Select this component for designs requiring high-frequency operation up to 8GHz with minimal signal degradation. Consider the SOT-323 package constraints for thermal management and ensure biasing circuits accommodate the 35mA maximum collector current limit while maintaining the desired noise performance specifications.
This component belongs to the broader family of UHF/VHF low-noise transistors originally engineered by NEC. Following the corporate restructuring involving NEC Electronics and Renesas Technology, the intellectual property and manufacturing rights were assumed by Renesas Electronics. CEL produces compatible versions adhering to these established technical standards.
Direct substitutes include the Renesas 2SC4228. Verify compatibility with other manufacturers such as Inchange Semiconductor or SLKOR if sourcing alternatives, ensuring all critical parameters like fT and NF remain consistent.