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Product Detailed Parameters
- Description：SMALL SIGNAL BIPOLAR TRANSTR NPN
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The 2SC4260TI-TR-E is a small signal NPN bipolar RF transistor manufactured by Renesas Electronics Corporation. Designed for radio frequency applications, this component functions as an RF amplifier within electronic circuits. It utilizes silicon technology and is packaged in a surface-mount configuration suitable for automated assembly processes.
Feature Summary
- NPN polarity configuration for RF signal amplification
- Silicon-based semiconductor construction
- Surface-mount package design
Applications
- Radio frequency signal amplification
- RF circuit modules
- Small signal processing systems
Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and tape specifications. Confirm that the supplier provides official documentation from Renesas Electronics Corporation. Check for any product change notices or lifecycle status updates prior to ordering to guarantee long-term availability and compliance with current manufacturing standards.
Selection Notes
Select this component specifically for NPN bipolar RF amplification requirements. Ensure the application voltage and current ratings align with the device's electrical limits. Consider the surface-mount package dimensions for PCB layout compatibility. Validate that the silicon technology meets the thermal and performance needs of the target RF environment.
Part Context
This part belongs to the Renesas Electronics Corporation family of RF bipolar transistors. It is designed for high-frequency operations where small signal gain is required. The component serves as a fundamental active element in RF front-end stages and communication system architectures requiring reliable silicon-based amplification.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical characteristics carefully when considering alternative components from other manufacturers to ensure functional equivalence in RF applications.
