2SC4304

Single Bipolar Transistors Overview

The Sanken 2SC4304 is a silicon NPN triple diffused planar transistor designed for high voltage and high speed switching applications. It features an absolute maximum collector-emitter voltage (VCEO) of 800 V and a continuous collector current (IC) rating of 3 A under pulsed conditions. The device operates with a maximum power dissipation of 35 W at a case temperature of 25°C and supports junction temperatures up to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 10, a typical transition frequency (fT) of 15 MHz, and a maximum collector cutoff current of 100 µA.

Single Bipolar Transistors Feature Summary

• Triple diffused planar construction ensures high reliability and robust performance in demanding environments.
• Optimized for high-speed switching operations with defined turn-on, storage, and turn-off time parameters.
• Capable of handling high reverse bias voltages suitable for primary side regulation circuits.

Single Bipolar Transistors Applications

• Switching regulators
• General purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact mechanical dimensions and marking variations. Ensure the component meets the required thermal management specifications for the intended application environment. Cross-reference the datasheet revision date to confirm the validity of the electrical parameters provided.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling capabilities. Consider the thermal resistance characteristics when designing heatsinking solutions, as power dissipation decreases linearly above 25°C case temperature. Evaluate the switching speed requirements against the typical fT and storage time values to ensure compatibility with the target operating frequency.

Single Bipolar Transistors Part Context

This component belongs to Sanken Electric's lineup of silicon NPN transistors engineered for power switching duties. The triple diffused planar technology distinguishes it from older diffusion methods, offering improved consistency and breakdown voltage stability. It serves as a discrete alternative to integrated power modules in cost-sensitive or customizable power supply architectures.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may differ in switching speeds or thermal limits.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 800 V.

How does the current gain vary with collector current?

The DC current gain (hFE) ranges from a minimum of 10 to 30 when measured at IC=10mA and VCE=4V.

What is the package type used for this transistor?

The device is housed in an FM20 (TO-220F) plastic package with an isolated tab.