2SC4420

Single Bipolar Transistors Overview

The Panasonic 2SC4420 is a silicon NPN triple diffusion planar power transistor designed for high breakdown voltage and high-speed switching applications. It features an EIAJ SC-92 (TOP-3F-A1) package with a collector-emitter voltage rating of 800 V and a continuous collector current capacity of 3 A. The device supports a peak collector current of 5 A and offers a collector power dissipation of 70 W at 25°C case temperature. Key electrical characteristics include a transition frequency of 10 MHz, a turn-on time of 0.7 µs, and a fall time of 0.3 µs.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with optimized turn-on and fall times
• Wide safe operation area ensuring durability under various load conditions
• Satisfactory linearity of forward current transfer ratio across operating ranges

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power amplifier stages
• Vertical output applications in display equipment

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm that the required thermal management solutions align with the specified junction temperature limits and power dissipation ratings to ensure reliable operation within the guaranteed operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector-base voltage ratings combined with fast switching speeds. Ensure the application environment allows for adequate heat sinking to manage the 70 W power dissipation, particularly if operating near maximum current levels. Verify that the base drive requirements match the saturation voltage specifications for efficient switching performance.

Single Bipolar Transistors Part Context

This transistor belongs to the category of silicon NPN power transistors utilizing triple diffusion planar technology. It is engineered specifically for scenarios demanding robust high-voltage handling alongside rapid response times. The design prioritizes wide safe operation areas and linear current gain characteristics to support stable performance in demanding electronic systems.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers. Cross-referencing should strictly adhere to absolute maximum ratings and pin configurations to maintain circuit integrity.