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Product Detailed Parameters
- Description：RF NPN 0.2A
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SC4454Q-AC is an NPN bipolar junction transistor (BJT) designed for radio frequency applications. Manufactured by onsemi, this component features a maximum collector current of 200mA and a collector-emitter breakdown voltage of 15V. It operates with a base-emitter saturation voltage of 250mV and dissipates up to 300mW of power. The device exhibits a leakage current of 100nA and requires a drive voltage of 5V. RoHS compliant and lead-free, it is suitable for RF signal processing tasks requiring compact packaging and reliable performance in consumer electronics.
Feature Summary
- Optimized for radio frequency signal amplification and switching
- NPN configuration with low saturation voltage for efficient operation
- RoHS compliant construction ensuring environmental safety standards
Applications
- RF amplifier circuits in communication devices
- Signal switching in consumer electronic equipment
- High-frequency oscillator stages
Procurement Notes
Verify the manufacturer part number matches exactly to ensure compatibility. Confirm RoHS compliance status if required for specific regulatory environments. Check datasheet specifications against circuit requirements before integration. Ensure storage conditions maintain component integrity. Validate supplier authenticity through authorized distribution channels.
Selection Notes
Choose this component when designing RF circuits requiring moderate current handling and low voltage operation. Consider the 300mW power dissipation limit for thermal management. Evaluate the 15V breakdown voltage against peak signal levels. Assess the 200mA collector current capacity for load requirements. Ensure the NPN polarity aligns with existing circuit topology.
Part Context
This transistor belongs to onsemi's portfolio of active electronic components, specifically within the bipolar junction transistor category. It serves as a fundamental building block for analog and RF signal processing systems. The device complements other discrete semiconductors used in modern electronics manufacturing.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter overlaps before swapping. Ensure thermal characteristics match the original design constraints.
