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2SC4474E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 200V 0.2A TO-220ML. Review the specifications below when checking this part for your BOM.
The onsemi 2SC4474E is a single NPN bipolar junction transistor designed for power applications. It features a collector-emitter voltage rating of 200 V and a maximum continuous collector current of 200 mA. The device exhibits a transition frequency of 300 MHz, supporting high-frequency operation. It is housed in a TO-220ML (TO-220-3 Full Pack) through-hole package, suitable for robust mounting. The component operates at a junction temperature up to 150°C and dissipates 1.8 W of power. Constructed from silicon with plastic/epoxy encapsulation, it serves as a reliable discrete semiconductor solution for switching and amplification tasks within specified electrical limits.
Verify the specific ordering suffix against official onsemi documentation to ensure exact pinout and thermal characteristics match design requirements. Confirm RoHS compliance status if environmental regulations apply to the end product. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability. Ensure the TO-220ML package dimensions align with PCB footprint constraints before finalizing procurement decisions.
Select this component when circuit designs require an NPN transistor capable of handling 200 V collector voltage and 200 mA current simultaneously. The 300 MHz transition frequency makes it suitable for applications demanding faster switching speeds than standard low-frequency devices. Consider the TO-220ML package for its thermal performance and mechanical stability in through-hole implementations compared to smaller surface-mount alternatives.
The 2SC4474E belongs to the family of single bipolar junction transistors manufactured by onsemi. It is categorized under power discretes, specifically designed for applications exceeding the capabilities of small-signal transistors. The device utilizes silicon technology and is packaged in a standard three-pin configuration, distinguishing it from multi-element integrated circuits or MOSFET-based solutions within the broader transistor market.
Consult official cross-reference lists for verified substitutes. Generic equivalents may differ in transition frequency or thermal resistance. Verify that any replacement maintains the 200 V V(BR)CEO and 200 mA Ic ratings to prevent circuit failure.
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