2SC4487T-AN

Single Bipolar Transistors Overview

The onsemi 2SC4487T-AN is an NPN single bipolar junction transistor housed in a surface-mount NMP (SC-71) package. It features a collector-to-emitter voltage of 50 V and a continuous collector current rating of 3 A, with a peak pulse current capability of 6 A. The device utilizes FBET and MBIT processes to achieve low collector-to-emitter saturation voltage and fast switching characteristics. Key electrical parameters include a DC current gain (hFE) ranging from 140 to 400 at 100 mA, a transition frequency of 150 MHz, and a maximum power dissipation of 1 W.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT manufacturing processes for enhanced performance
• Provides large current capacity and wide safe operating area
• Delivers low collector-to-emitter saturation voltage
• Ensures fast switching speed capabilities

Single Bipolar Transistors Applications

• High-current switching applications
• General-purpose amplifier circuits
• Power management systems requiring low saturation voltage

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T-AN' corresponds to the required tape-and-reel packaging configuration rather than bulk box quantities. Confirm that the SC-71 footprint matches the design layout. Ensure compliance with RoHS standards as indicated in the product documentation. Cross-reference the manufacturer part number EN3093A for accurate procurement details.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high current handling is required. The 150 MHz transition frequency supports high-speed switching needs. Consider the low VCE(sat) for improved efficiency in saturated switching modes. Verify thermal constraints against the 1 W power dissipation limit and the 150 °C junction temperature rating during operation.

Single Bipolar Transistors Part Context

This device belongs to the 2SA1707/2SC4487 series of bipolar transistors manufactured by onsemi. It serves as the NPN counterpart to the PNP 2SA1707. Both devices share identical structural features and are designed for complementary push-pull configurations or standalone high-current switching roles within discrete semiconductor product lines.

Single Bipolar Transistors Replacement Considerations

The datasheet lists the 2SA1707T-AN as a related device within the same series. No other direct substitute part numbers are explicitly confirmed in the provided documentation.