2SC4487T-AN

Single Bipolar Transistors Overview

The onsemi 2SC4487T-AN is a high-current switching NPN bipolar junction transistor (BJT) belonging to the EN series. It features a collector-emitter breakdown voltage of 150V and a continuous collector current rating of 8A. The device utilizes a TO-3PFL surface-mount package, providing robust thermal performance for power applications. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 240 at a collector current of 2A, and a low saturation voltage of 1.2V maximum at 4A. Designed for high reliability, it incorporates an avalanche energy guarantee and operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High current handling capability with an 8A continuous collector current rating
• Robust avalanche resistance guaranteed for enhanced circuit protection
• Low saturation voltage design to minimize conduction losses in switching applications
• Surface-mount TO-3PFL package optimized for efficient heat dissipation

Single Bipolar Transistors Applications

• High-power switching circuits requiring fast response times
• Industrial motor control systems and drive interfaces
• Power supply output stages and regulator designs
• Automotive electronics and lighting control modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T-AN' against the manufacturer's official datasheet to confirm tape-and-reel packaging and lead-free compliance. Ensure the component matches the exact pinout and thermal pad specifications required by your PCB layout. Cross-reference the date code and lot number with onsemi's quality documentation to verify authenticity and traceability before integration into production.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that demand high current switching capabilities exceeding standard small-signal transistor limits. The TO-3PFL package is suitable for applications where space constraints preclude through-hole mounting but thermal management remains critical. Consider the 150V breakdown voltage and 8A current rating to ensure adequate headroom for transient loads and steady-state operation in power conversion topologies.

Single Bipolar Transistors Part Context

The 2SC4487T-AN is part of onsemi's EN series of high-current bipolar transistors, engineered for demanding power switching environments. This series emphasizes reliability through advanced manufacturing processes, including avalanche energy guarantees. The device serves as a discrete solution for replacing older through-hole counterparts in modern surface-mount assemblies, offering improved thermal performance and automated assembly compatibility for industrial and automotive markets.

Single Bipolar Transistors Replacement Considerations

The 2SC4487S-AN is a verified equivalent variant within the same family, differing primarily in packaging configuration while maintaining identical electrical specifications. Verify pinout compatibility and thermal resistance values when substituting between S-AN and T-AN suffixes to ensure proper board integration.