2SC4546

Single Bipolar Transistors Overview

The 2SC4546 is a silicon NPN triple diffused planar transistor designed for high voltage and ultra-high speed switching applications. It features a collector-emitter breakdown voltage of 400V minimum and supports a continuous collector current of 7A, with a pulse rating of 14A. The device operates with a maximum power dissipation of 30W at 25°C case temperature. Key electrical characteristics include a typical transition frequency (fT) of 10MHz and a low output capacitance of 55pF. It utilizes the FM20 (TO-220F) package.

Single Bipolar Transistors Feature Summary

• Triple diffused planar structure engineered for high voltage endurance and rapid switching performance.
• High collector current capability supporting up to 7A continuous operation.
• Optimized for low saturation voltages and fast turn-off times in hard-switching environments.

Single Bipolar Transistors Applications

• Switching regulators
• Lighting inverters
• General purpose high-speed switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the FM20 package dimensions align with the target PCB footprint. Ensure thermal management solutions account for the 30W power dissipation limit at the specified case temperature. Check for any design-in restrictions or obsolescence notices associated with this component.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust high-voltage handling combined with moderate speed switching capabilities. The 400V V(BR)CEO rating provides sufficient margin for standard industrial and consumer power supplies. Consider the thermal resistance characteristics when designing heatsinking strategies for continuous load operations.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken Electric's lineup of silicon NPN power transistors utilizing triple diffused planar technology. It is positioned as a solution for applications demanding reliability under high voltage stress. The device serves as a discrete alternative to integrated power modules in cost-sensitive switching topologies.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and absolute maximum ratings if considering cross-references from other manufacturers.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage V(BR)CEO is 400V.

What is the package type used for this transistor?

The device is housed in the FM20 package, which corresponds to the TO-220F form factor.

Is this component recommended for new designs?

No, the datasheet explicitly states that this part is not recommended for new designs.