2SC4548E-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC4548E-TD-E is an NPN silicon RF transistor designed for high-frequency applications. It features a typical transition frequency (fT) of 10 GHz and a maximum collector current of 30 mA. The device operates with a collector-emitter voltage of 12 V and includes an integrated emitter ballast resistor to enhance thermal stability. Packaged in the compact CP-6 surface-mount format, it supports operation across a temperature range from -55°C to +150°C junction temperature.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a 10 GHz transition frequency
• Integrated emitter ballast resistor for improved thermal stability
• Compact CP-6 surface-mount package design

Single Bipolar Transistors Applications

• RF power amplification stages
• Low-noise amplifier circuits
• Microwave communication systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TD-E' against official datasheets to confirm tape-and-reel packaging and lead finish specifications. Ensure compatibility with standard SMT reflow profiles and check for RoHS compliance status prior to integration into production assemblies.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high gain at microwave frequencies within a small footprint. Evaluate the trade-off between the 30 mA current limit and the required output power. Confirm that the CP-6 package thermal resistance meets the system's heat dissipation requirements under continuous wave operation.

Single Bipolar Transistors Part Context

This part belongs to onsemi's portfolio of high-frequency NPN silicon transistors intended for RF and microwave circuitry. It serves as a specialized active element for signal processing tasks where miniaturization and high cutoff frequencies are critical performance factors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent RF transistors with matching fT ratings and pin configurations. Verify that alternative devices support the same 12 V operating voltage and provide comparable noise figure characteristics.