2SC4614T-AN

Single Bipolar Transistors Overview

The onsemi 2SC4614T-AN is an NPN epitaxial planar silicon transistor housed in the NMP (SC-71) surface-mount package. It features a maximum collector-to-emitter voltage of 160 V and a continuous collector current rating of 1.5 A, with a peak pulse current capacity of 2.5 A. The device utilizes the MBIT process to achieve low saturation voltages and high breakdown capabilities. Key electrical characteristics include a DC current gain ranging from 80 to 400 depending on the rank, a gain-bandwidth product of 120 MHz, and a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides high breakdown voltage combined with large current capacity
• Designed for low collector-to-emitter saturation voltage operation

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring high voltage tolerance
• Low-frequency signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T-AN' corresponds to the NMP tape-and-reel packaging configuration containing 2,500 pieces per box as defined in the official datasheet. Confirm that the component meets the required JEITA SC-71 package dimensions and electrical ranking specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require an NPN transistor with a minimum 160 V collector-to-emitter voltage rating and up to 1.5 A continuous current handling. Consider the NMP package for space-constrained surface-mount designs. Ensure the application operates within the specified 150 °C maximum junction temperature limit and accounts for the 1 W power dissipation capability at 25 °C ambient conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4614 series manufactured by onsemi, which shares specifications with the complementary 2SA1770 PNP transistor. Both devices are produced using the same MBIT process technology and utilize the NMP package. The series is designed for general-purpose use where high voltage blocking and moderate current switching are required.

Single Bipolar Transistors Replacement Considerations

The 2SC4614S-AN is a verified substitute offering identical electrical ratings and functionality but packaged in bulk bags instead of tape-and-reel format.

Single Bipolar Transistors FAQ

What is the maximum collector-to-base voltage for the 2SC4614T-AN?

The absolute maximum collector-to-base voltage rating is 180 V.

How is the DC current gain classified for this device?

The device is ranked based on DC current gain at 100 mA: Rank S covers 140 to 280, and Rank T covers 200 to 400.

What is the typical output capacitance of the transistor?

The output capacitance is typically 14 pF when measured at a collector-base voltage of 10 V and a frequency of 1 MHz.