2SC4616E-E

Single Bipolar Transistors Overview

The onsemi 2SC4616E-E is a high-voltage NPN single bipolar junction transistor designed for demanding power applications. It features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 2A. The device is housed in the SPAK surface-mount package, which provides robust thermal performance and mechanical stability. With a rated power dissipation of 25W at 25°C ambient temperature, it supports efficient heat management through its metal tab construction. This component is suitable for circuits requiring high voltage isolation and substantial current handling capabilities.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400V collector-emitter breakdown rating
• Robust current handling with 2A maximum collector current specification
• SPAK surface-mount package design for effective thermal dissipation
• NPN silicon epitaxial planar structure for reliable switching

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply output stages
• Industrial motor control systems
• Inverter bridge configurations

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' to ensure compatibility with the SPAK package and 400V rating. Confirm that the manufacturer designation matches onsemi specifications rather than generic equivalents. Check datasheet revisions for any updates to thermal resistance values or pinout definitions before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements exceed standard low-voltage transistor limits but do not necessitate discrete power modules. Evaluate thermal derating curves to ensure adequate heat sinking for the intended operating environment. Compare total cost of ownership against through-hole alternatives considering board space constraints and assembly automation requirements.

Single Bipolar Transistors Part Context

This part belongs to the family of high-voltage NPN transistors manufactured by onsemi. It shares structural similarities with other devices in the series but is distinct due to its specific 400V rating and SPAK packaging. The component serves as a critical element in medium-power electronic designs where reliability under high stress conditions is paramount.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC4616E-TL-E from onsemi, which offers identical electrical characteristics and package dimensions. Verify pinout compatibility and thermal performance metrics when considering cross-manufacturer alternatives to ensure seamless integration into existing designs.