Single Bipolar Transistors 2SC4617T1G product image

2SC4617T1G

  • Description:TRANS NPN 50V 0.1A SC75 SOT416
  • Series:-

SKU:e401e0dcfe1f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC4617T1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SC75 SOT416. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4617T1G

  • Description:TRANS NPN 50V 0.1A SC75 SOT416
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 60mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:125 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416

Single Bipolar Transistors datasheet and documents for 2SC4617T1G

2SC4617T1G

Single Bipolar Transistors Overview

The onsemi 2SC4617T1G is an NPN silicon general-purpose amplifier transistor housed in the SC-75 (SOT-416) surface-mount package. It provides a collector-emitter breakdown voltage of 50 Vdc and supports a continuous collector current of 100 mAdc. The device features a typical DC current gain ranging from 210 to 460, with a maximum rating up to 560 under specific test conditions. Thermal characteristics include a power dissipation capacity of 125 mW and a junction temperature limit of 150 °C.

Single Bipolar Transistors Feature Summary

  • Designed for low-power surface mount applications where board space is limited
  • Offers high DC current gain for efficient signal amplification
  • Provides low collector-emitter saturation voltage for improved efficiency

Single Bipolar Transistors Applications

  • General purpose amplifier circuits
  • Low power switching applications
  • Space-constrained electronic designs

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix T1G corresponds to the specified tape and reel packaging configuration containing 3,000 units per reel. Confirm compliance requirements such as RoHS and Pb-Free status match project specifications. Ensure the SC-75 footprint dimensions align with the PCB layout constraints before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor is required for general-purpose amplification or switching tasks. Evaluate the 50 Vdc voltage ratings against circuit operating limits. Consider the thermal management capabilities relative to the expected power dissipation levels within the target application environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4617 series of NPN silicon transistors manufactured by onsemi. It shares core electrical characteristics with variants like the 2SC4617G but differs in packaging format. The device is intended for use in consumer electronics and industrial equipment requiring reliable small-signal performance.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC4617G and S2SC4617G, which share identical electrical specifications and package type. Verify pinout compatibility and thermal resistance values when transitioning between these specific part numbers.

2SC4617T1G2SC4617T1G

Click on the inquiry