2SC4682,T6CSF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4682 is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with a collector-base voltage of 30 V, a collector-emitter breakdown voltage of 15 V, and an emitter-base voltage of 6 V. The device supports a continuous DC collector current of 3 A and a pulse current of 6 A. Electrical characteristics include a DC current gain ranging from 800 to 3200 at 0.5 A, and a maximum collector-emitter saturation voltage of 0.5 V at 3 A.

Single Bipolar Transistors Feature Summary

• Excellent hFE linearity for consistent amplification performance across varying current levels
• Low collector saturation voltage enabling efficient power handling in high-current applications
• High transition frequency suitable for medium-power amplifier designs

Single Bipolar Transistors Applications

• Strobe flash circuits
• Medium power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking the lot number marking on the component body or contacting the manufacturer directly, as environmental compliance varies by production batch. Confirm that the specific ordering suffix matches the required packaging format. Ensure the procurement channel provides valid traceability documentation to guarantee authenticity and adherence to the specified electrical parameters.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high DC current gain and low saturation voltage for efficient switching or amplification. Consider the 15 V collector-emitter breakdown voltage limit when determining operating margins. Evaluate the thermal dissipation requirements against the 900 mW power rating, particularly if operating near the maximum collector current limits under continuous conditions.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN epitaxial planar transistors designed for general electronics applications. It serves as a complementary or alternative device to other medium-power transistors within the same product line. The component is intended for use in consumer electronics, office equipment, and measuring instruments where reliable amplification and switching are required.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 15 V.

Does the 2SC4682 support zero-crossing detection?

No, the datasheet does not list zero-crossing detection capabilities; it is designed for strobe flash and medium power amplifier applications.

What is the typical DC current gain at 3 A collector current?

The typical DC current gain (hFE(2)) is 500 when measured at a collector current of 3 A and a collector-emitter voltage of 1 V.