2SC4695-TB-E

Single Bipolar Transistors Overview

The 2SC4695-TB-E is an NPN epitaxial planar silicon transistor manufactured by onsemi. It features a collector-to-emitter voltage (V(BR)CEO) of 20V and a maximum continuous collector current (I(C)) of 500mA. The device is housed in a surface-mount TO-236 package. Key electrical characteristics include a minimum DC current gain (hFE) of 300, a maximum power dissipation of 0.25W, and a high emitter-to-base voltage (V(EBO)) of at least 25V. It utilizes FBET process technology for low-frequency general-purpose amplification.

Single Bipolar Transistors Feature Summary

• Adopts FBET process technology for enhanced performance.
• Provides high DC current gain with a minimum value of 300.
• Features high reverse hFE for improved switching characteristics.
• Offers small ON resistance to minimize power loss during conduction.

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifier circuits
• Audio muting applications
• Small and slim consumer electronic sets

Single Bipolar Transistors Procurement Notes

Verify the specific suffix -TB-E against official onsemi documentation to confirm tape-and-reel packaging specifications. Ensure the component meets RoHS compliance requirements as stated in the datasheet. Cross-reference the ordering number ENN3486 for accurate procurement details. Confirm that the TO-236 package dimensions match your PCB footprint design constraints.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high current gain in a compact surface-mount form factor. The 20V V(BR)CEO rating suits low-voltage signal processing tasks. Consider the 0.25W power dissipation limit when designing thermal management solutions. The ultrasmall package size makes it suitable for space-constrained portable devices where slim profiles are critical.

Single Bipolar Transistors Part Context

This NPN transistor belongs to onsemi's discrete semiconductor product line, specifically categorized under general-purpose transistors. It is designed for use in audio and control circuits within consumer electronics. The device leverages advanced epitaxial planar silicon technology to deliver reliable performance in low-power applications.

Single Bipolar Transistors Replacement Considerations

Consult official onsemi substitution guides for compatible NPN transistors with similar V(BR)CEO and I(C) ratings. Verify pinout compatibility and package dimensions before replacing. No direct substitute part numbers are confirmed in the provided public documentation.