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The CEL 2SC4703-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplifier applications. It operates with a low supply voltage of 5 V, achieving typical intermodulation distortion levels of IM2 = 55 dBc and IM3 = 76 dBc at IC = 50 mA. The device features a gain bandwidth product (fT) of 6.0 GHz and a total power dissipation of 1.8 W when mounted on a specified ceramic substrate. Key electrical parameters include a collector-to-base voltage (VCBO) of 25 V, collector current (IC) of 150 mA, and a noise figure of 2.3 dB at 1 GHz.
Verify the specific ordering suffix against the manufacturer's documentation to ensure correct packaging configuration. The datasheet indicates availability in non-reel quantities of 25 pieces or reel quantities of 1 kpcs. Confirm that the component matches the NE46234 designation and SOT-89 package requirements for your circuit design before finalizing procurement.
Select this component for designs requiring low intermodulation distortion at 5 V supply voltages. Ensure the PCB layout supports the required thermal dissipation for the 1.8 W rating using a double-sided copper-clad ceramic substrate. Verify that the operating frequency aligns with the 6.0 GHz gain bandwidth product and check hFE binning if DC gain consistency is critical.
The 2SC4703 is part of the NEC/CEL family of NPN silicon RF transistors, specifically engineered for radio frequency applications. It serves as a direct equivalent to the NE46234 model. The device is manufactured by CEL (formerly NEC Electronics), focusing on high-performance semiconductor solutions for communication infrastructure.
The NE46234 is the primary cross-reference for the 2SC4703. Verify pinout compatibility and thermal resistance specifications when substituting with other SOT-89 RF transistors.