Single Bipolar Transistors 2SC4738-GR,LF product image

2SC4738-GR,LF

$0.15
  • Description:TRANS NPN 50V 0.15A SSM
  • Series:-

SKU:65b9cec90441 Category: Brand:

  
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2SC4738-GR,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.15A SSM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4738-GR,LF

  • Description:TRANS NPN 50V 0.15A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:100 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4738-GR,LF

2SC4738-GR,LF

Single Bipolar Transistors Overview

The Toshiba 2SC4738-GR,LF is an NPN silicon bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It operates with a maximum collector current of 150 mA and withstands a collector-emitter voltage of 50 V. The device features a high DC current gain ranging from 120 to 700, ensuring efficient signal control. With a transition frequency of 80 MHz and low saturation voltage, it supports reliable performance in compact circuits. Packaged in the SOT-416-3 surface-mount format, it offers a power dissipation capacity of 100 mW and functions within a temperature range up to +125°C.

Single Bipolar Transistors Feature Summary

  • High DC current gain for effective signal amplification
  • Low collector-emitter saturation voltage for efficient switching
  • Compact SOT-416-3 surface-mount package design

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Small-signal amplification stages
  • Consumer electronic device interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR against official Toshiba documentation to confirm binning or gain classification differences compared to standard variants. Ensure the component matches the required RoHS compliance status for your manufacturing process. Cross-reference the datasheet electrical characteristics with your circuit requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN transistor is required for low-power applications. The 150 mA current rating suits light loads, while the 50 V breakdown voltage provides adequate headroom for standard logic levels. Consider the thermal constraints of the SOT-416-3 package if operating near maximum power dissipation limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4738 series of small-signal transistors manufactured by Toshiba Semiconductor and Storage. The series is engineered for use in portable electronics and general-purpose logic circuits where space efficiency and moderate gain are prioritized over high-power handling capabilities.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SC4738-GR,LF variant are not available in verified sources. Consult official Toshiba cross-reference guides for potential equivalents.

2SC4738-GR,LF2SC4738-GR,LF
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