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Product Detailed Parameters
- Description：RF TRANS NPN 6V 800MHZ UMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：6V
- Frequency - Transition：800MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 5mA, 5V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：UMT3
- Grade：-
- Qualification：-
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Overview
The 2SC4774T106S is an NPN silicon RF transistor manufactured by Rohm Semiconductor, housed in a SOT-323 (UMT3) surface-mount package. It features a collector-emitter breakdown voltage of 6V and a maximum collector current of 50mA. The device supports a transition frequency up to 800MHz with a typical output capacitance of 1.7pF. DC current gain ranges from 180 to 560 depending on the hFE rank. Maximum power dissipation is 200mW at 25°C ambient temperature, with a junction temperature limit of 150°C.
Feature Summary
- Very low output-on resistance for efficient switching performance
- Low capacitance characteristics suitable for high-frequency applications
Applications
- High frequency amplifier circuits
- RF switching applications
Procurement Notes
Verify the specific ordering suffix T106 against official Rohm documentation to confirm packaging details and basic ordering unit quantities. Ensure compliance with RoHS standards and check for any specific handling requirements related to electrostatic discharge protection during storage and manufacturing processes.
Selection Notes
Select this component for designs requiring low voltage operation with high-speed switching capabilities. Consider the 6V collector-emitter rating and 50mA current limits when designing biasing networks. Evaluate thermal management strategies to maintain junction temperatures within the specified 150°C maximum limit under varying load conditions.
Part Context
This part belongs to Rohm's discrete bipolar transistor family designed for small-signal RF applications. The SOT-323 package provides a compact footprint for space-constrained PCB layouts. The product line emphasizes low parasitic effects to maintain signal integrity in ultra-high frequency bands.
Replacement Considerations
Consult official substitution guides for compatible NPN transistors with matching VCEO, IC, and package dimensions. Verify electrical parameters such as transition frequency and capacitance before implementation.
FAQ
What is the typical output capacitance value?
The typical output capacitance (Cob) is 1.0pF, with a maximum of 1.7pF measured at Vcb=10V and f=1MHz.
How is the DC current gain classified?
The hFE values are classified into ranks RS, where Rank R covers 180-390 and Rank S covers 270-560 at Vce=5V and Ic=5mA.
What precautions are recommended for ESD?
The product is electrostatic sensitive; proper grounding, ionizer usage, and humidity control are required to prevent damage from static discharge.
