Single Bipolar Transistors 2SC4793,F(J product image

2SC4793,F(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-

SKU:f7447cd628ac Category: Brand:

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2SC4793,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4793,F(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4793,F(J

2SC4793,F(J

Single Bipolar Transistors Overview

The Toshiba 2SC4793,F(J is a silicon NPN epitaxial planar power transistor designed for high-frequency applications. It features a collector-emitter breakdown voltage of 230 V and a maximum collector current of 1 A. The device achieves a typical transition frequency (fT) of 100 MHz at 100 mA. It operates with a junction temperature up to 150 °C and offers a DC current gain ranging from 100 to 320. The component is housed in a TO-220F package.

Single Bipolar Transistors Feature Summary

  • High transition frequency capability suitable for RF amplification
  • Complementary pairing available with the 2SA1837 PNP transistor
  • Epitaxial planar construction for robust performance

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official Toshiba datasheet to confirm lead plating specifications, as markings indicate lead-free finishes. Ensure compliance with general electronics application guidelines and avoid usage in unintended high-reliability sectors such as medical or aerospace equipment without explicit manufacturer validation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling combined with significant bandwidth. The 230 V rating supports demanding supply rails, while the 100 MHz transition frequency ensures signal integrity in audio and RF driver stages. Verify thermal management requirements for the TO-220F package to maintain safe operating area limits during continuous operation.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to Toshiba's discrete semiconductor lineup intended for general electronic equipment. It serves as a complementary match to the 2SA1837 PNP device, facilitating push-pull configurations in amplifier architectures. The component targets consumer and industrial electronics rather than specialized safety-critical systems.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 is documented as the complementary PNP counterpart. Cross-reference absolute maximum ratings and transition frequencies when substituting with other NPN power transistors to ensure equivalent voltage and bandwidth performance.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz when measured at a collector current of 100 mA and a collector-emitter voltage of 10 V.

Is the 2SC4793 compatible with the 2SA1837?

Yes, the datasheet explicitly states that the 2SC4793 is complementary to the 2SA1837 PNP transistor.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 230 V.

2SC4793,F(J2SC4793,F(J

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