2SC4793(F,M)

Single Bipolar Transistors Overview

The 2SC4793 is a silicon NPN epitaxial planar power transistor designed for high-frequency amplifier applications. It features a maximum collector-emitter voltage of 230 V and a continuous collector current rating of 1 A. The device achieves a typical transition frequency (fT) of 100 MHz at 100 mA, supporting driver stage and power amplifier designs. Thermal management allows for 2 W dissipation in free air and up to 20 W when mounted to a heatsink at 25°C. The component utilizes a TO-220F package with an isolated mounting base.

Single Bipolar Transistors Feature Summary

• High transition frequency capability suitable for RF driver stages
• Complementary pairing available with the 2SA1837 PNP transistor
• Isolated metal mounting tab for direct heatsink attachment

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers
• General-purpose switching applications within specified ratings

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm lead-free plating status and packaging type. Confirm RoHS compliance requirements prior to procurement. Ensure the selected variant matches the required thermal resistance characteristics for the intended application environment.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage handling combined with moderate current capacity. Verify that the operating junction temperature remains within the 150°C limit under worst-case conditions. Consider the complementary 2SA1837 for push-pull configurations. Ensure adequate heatsinking is provided to maintain the collector temperature below the absolute maximum rating during operation.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's lineup of general-purpose silicon NPN power transistors. It is engineered for use in consumer electronics and industrial equipment where reliable amplification is required. The device is manufactured using epitaxial planar technology to ensure stable performance across varying temperatures.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 serves as the complementary PNP counterpart for balanced circuit designs. Direct replacements should match the 230V/1A rating and TO-220F footprint while verifying equivalent transition frequency specifications.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz when measured at a collector current of 100 mA and a collector-emitter voltage of 10 V.

How does the 2SC4793 pair with other components?

It is electrically complementary to the 2SA1837 PNP transistor, allowing for matched push-pull amplifier configurations.

What is the maximum collector power dissipation?

The device can dissipate 2 W in free air at 25°C ambient temperature, or up to 20 W when the case is maintained at 25°C via a heatsink.