2SC4793,TOA1F(J

Single Bipolar Transistors Overview

The Toshiba 2SC4793 is a silicon NPN epitaxial planar transistor designed for power amplifier and driver stage applications. It features a collector-emitter voltage (VCEO) of 230 V and a continuous collector current (IC) rating of 1 A at a case temperature of 25°C. The device exhibits a typical transition frequency (fT) of 100 MHz, ensuring high-speed performance. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 320 under standard test conditions. The component is housed in a TO-220F package with a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High transition frequency capability suitable for RF and audio driver stages
• Complementary pairing available with the 2SA1837 PNP transistor
• Robust thermal management via isolated flange mounting

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as datasheet documentation indicates separate inquiries are required for specific environmental compatibility details. Confirm that the ordering suffix matches the desired lead plating finish, such as lead-free options, to ensure alignment with assembly requirements.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling up to 230 V combined with moderate current capabilities. Ensure adequate heat sinking is implemented to maintain the case temperature within specified limits, as power dissipation ratings are strictly dependent on thermal conditions. Consider the complementary 2SA1837 for push-pull configurations.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup focused on general-purpose power applications. It serves as a high-voltage alternative for audio and signal processing circuits where standard low-voltage transistors are insufficient. The device complements the broader family of power transistors used in consumer electronics and industrial equipment.

Single Bipolar Transistors Replacement Considerations

The 2SA1837 is documented as the complementary PNP counterpart. Verify pinout compatibility and electrical parameters before substituting with other generic NPN power transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (V(BR)CEO) is rated at 230 V.

Is this transistor compatible with the 2SA1837?

Yes, the datasheet explicitly states it is complementary to the 2SA1837 PNP transistor.

What is the typical transition frequency?

The transition frequency (fT) is typically 100 MHz when measured at VCE = 10 V and IC = 100 mA.