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The Fairchild Semiconductor 2SC4853A-4-TL-E is an RF small signal NPN bipolar junction transistor designed for C-band applications. It features a maximum collector current of 0.015 A and a collector-emitter voltage rating of 6 V. The device has a minimum DC current gain (hFE) of 90 and operates at temperatures up to 150 °C. It is housed in a 3-pin Small Outline Package (SOP) with gull-wing terminals, suitable for surface mount assembly. The component is constructed from silicon and dissipates a maximum power of 0.09 W.
Verify the manufacturer datasheet for specific ordering suffixes and pin configurations. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the procurement channel provides traceability documentation for quality assurance purposes.
Select this component when designing for C-band RF applications requiring a small signal NPN transistor. Consider the 6 V collector-emitter voltage limit and 0.015 A current capacity during circuit design. Evaluate the thermal management requirements given the 0.09 W power dissipation limit in the specified package.
This part belongs to the family of RF small signal transistors manufactured by Fairchild Semiconductor. It utilizes silicon technology and is intended for high-frequency applications. The device is categorized under discrete semiconductors, specifically bipolar transistors, serving as a fundamental active component in RF signal chains.
Consult official replacement guides for equivalent components. Verify that any substitute matches the NPN configuration, C-band suitability, and SOP-3 package dimensions. Ensure electrical parameters such as voltage ratings and current gains meet or exceed the original specifications.