2SC4915-O,LF

Overview

The 2SC4915-O,LF is an NPN RF bipolar transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 30V and a transition frequency (fT) of 550MHz. The device supports a maximum collector current of 20mA and dissipates up to 100mW of power. Packaged in the SSM (SOT-416) surface-mount format, it is designed for high-frequency applications requiring compact integration.

Feature Summary

• NPN polarity configuration optimized for radio frequency signal processing
• High transition frequency capability supporting operations up to 550MHz
• Compact surface-mount SSM package design for automated assembly

Applications

• RF amplifier circuits
• High-frequency signal processing modules
• Wireless communication transceivers

Procurement Notes

Verify part authenticity through official Toshiba channels or authorized distributors. Confirm that the ordering suffix -O,LF matches the required RoHS compliance and tape/reel packaging specifications. Cross-reference datasheet parameters against specific circuit requirements to ensure compatibility with system voltage and frequency constraints.

Selection Notes

Select this component when an NPN RF transistor with 30V breakdown and 550MHz performance is required. Ensure the application fits within the 20mA current and 100mW power limits. The SSM package necessitates compatible PCB footprint design. Consider thermal management strategies suitable for small surface-mount enclosures during high-frequency operation.

Part Context

This component belongs to Toshiba's Bipolar Transistors for RF and Power Supply series. It serves as a specialized discrete semiconductor device engineered for radio frequency environments. The product line emphasizes reliability and performance in compact form factors for modern electronic systems requiring efficient signal amplification.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.