Single Bipolar Transistors 2SC4919-S-TL-E product image

2SC4919-S-TL-E

$0.12
  • Description:TRANS NPN 15V 0.1A 3-SSFP
  • Series:-

SKU:5f6c842903c8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC4919-S-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 15V 0.1A 3-SSFP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4919-S-TL-E

  • Description:TRANS NPN 15V 0.1A 3-SSFP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):15 V
  • Vce Saturation (Max) @ Ib, Ic:30mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:800 @ 5mA, 2V
  • Power - Max:150 mW
  • Frequency - Transition:240MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-623F
  • Supplier Device Package:3-SSFP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4919-S-TL-E

2SC4919-S-TL-E

Single Bipolar Transistors Overview

The onsemi 2SC4919-S-TL-E is an NPN epitaxial planar silicon transistor designed for muting circuit applications. It features a collector-to-emitter voltage of 15 V and a continuous collector current rating of 100 mA. The device provides a DC current gain ranging from 800 to 3200 at 5 mA, with a gain-bandwidth product of 240 MHz. Key electrical characteristics include a low collector-to-emitter saturation voltage of 30 mV maximum and an output capacitance of 1.4 pF. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

  • Ultrasmall-sized package permitting applied sets to be made small and slim
  • Small output capacitance
  • Low collector-to-emitter saturation voltage
  • Low ON resistance

Single Bipolar Transistors Applications

  • Muting circuits

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by SANYO Semiconductor Co., Ltd. Confirm that the specific ordering suffix matches your required packaging configuration. Ensure all absolute maximum ratings are respected during design to prevent device failure or safety hazards in the final application.

Single Bipolar Transistors Selection Notes

Select this transistor when high DC current gain and low saturation voltage are critical requirements. The ultrasmall package size makes it suitable for space-constrained designs. Evaluate the thermal dissipation capabilities against your ambient operating conditions to ensure reliable performance within the specified junction temperature limits.

Single Bipolar Transistors Part Context

This component belongs to the category of NPN epitaxial planar silicon transistors. It is specifically engineered for general electronics equipment use, including home appliances and communication devices. The device is not intended for special applications requiring extremely high reliability, such as aerospace or medical life-sustaining equipment.

Single Bipolar Transistors Replacement Considerations

Consult official documentation before substituting with other transistors. Verify that any alternative part meets the same pinout configuration, voltage ratings, and package dimensions to ensure compatibility with existing circuit layouts.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter breakdown voltage?

The maximum collector-to-emitter breakdown voltage (V(BR)CEO) is 15 V.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from a minimum of 800 to a maximum of 3200 under standard test conditions.

Is this transistor suitable for high-frequency applications?

Yes, it has a gain-bandwidth product (fT) of 240 MHz, making it suitable for certain high-frequency uses.

2SC4919-S-TL-E2SC4919-S-TL-E
$0.12
Buy Now