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2SC4919-S-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 15V 0.1A 3-SSFP. Review the specifications below when checking this part for your BOM.
The onsemi 2SC4919-S-TL-E is an NPN epitaxial planar silicon transistor designed for muting circuit applications. It features a collector-to-emitter voltage of 15 V and a continuous collector current rating of 100 mA. The device provides a DC current gain ranging from 800 to 3200 at 5 mA, with a gain-bandwidth product of 240 MHz. Key electrical characteristics include a low collector-to-emitter saturation voltage of 30 mV maximum and an output capacitance of 1.4 pF. It operates within a junction temperature range up to 150 °C.
Verify the manufacturer origin carefully, as this component was originally produced by SANYO Semiconductor Co., Ltd. Confirm that the specific ordering suffix matches your required packaging configuration. Ensure all absolute maximum ratings are respected during design to prevent device failure or safety hazards in the final application.
Select this transistor when high DC current gain and low saturation voltage are critical requirements. The ultrasmall package size makes it suitable for space-constrained designs. Evaluate the thermal dissipation capabilities against your ambient operating conditions to ensure reliable performance within the specified junction temperature limits.
This component belongs to the category of NPN epitaxial planar silicon transistors. It is specifically engineered for general electronics equipment use, including home appliances and communication devices. The device is not intended for special applications requiring extremely high reliability, such as aerospace or medical life-sustaining equipment.
Consult official documentation before substituting with other transistors. Verify that any alternative part meets the same pinout configuration, voltage ratings, and package dimensions to ensure compatibility with existing circuit layouts.
The maximum collector-to-emitter breakdown voltage (V(BR)CEO) is 15 V.
The DC current gain (hFE) ranges from a minimum of 800 to a maximum of 3200 under standard test conditions.
Yes, it has a gain-bandwidth product (fT) of 240 MHz, making it suitable for certain high-frequency uses.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.