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2SC4942-T1-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC4942-T1-AZ
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC4942-T1-AZ
Single Bipolar Transistors Overview
The 2SC4942-T1-AZ is an NPN silicon triple diffused transistor designed for high-speed, high-voltage switching applications. It features a collector-emitter voltage rating of 600 V and a DC collector current capacity of 1.0 A. The device exhibits a gain bandwidth product of 30 MHz and turn-on time of 0.5 µs. It utilizes a specialized package with dimensions intermediate between small signal and power signal types, offering fast switching speed and complementing the 2SA1871 PNP transistor.
Single Bipolar Transistors Feature Summary
- Triple diffused NPN silicon construction optimized for high-speed and high-voltage switching environments
- Specialized package design providing physical dimensions between standard small signal and power signal classifications
- Fast switching characteristics including defined turn-on and fall times suitable for demanding converter topologies
Single Bipolar Transistors Applications
- Switching regulators
- DC/DC converters
Single Bipolar Transistors Procurement Notes
Verify component authenticity through authorized Renesas Electronics sales offices or distributors. Confirm the latest quality grade classification and recommended application categories prior to integration. Ensure compliance with export control laws and regulations applicable to semiconductor products. Review the most recent datasheet revisions for any updates to absolute maximum ratings or electrical specifications before finalizing procurement orders.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring high-voltage isolation up to 600 V combined with rapid switching transitions. Evaluate thermal management requirements based on the 2.0 W total power dissipation limit under specified mounting conditions. Consider the complementary 2SA1871 for push-pull configurations. Verify that the operating junction temperature remains within the -55 °C to +150 °C storage range and 150 °C maximum junction limit during operation.
Single Bipolar Transistors Part Context
This part belongs to the Renesas Electronics portfolio, formerly NEC Electronics Corporation. It is classified as a Standard quality grade silicon transistor intended for general-purpose high-speed switching. The device represents a legacy product line integrated into the broader Renesas discrete semiconductor catalog following corporate mergers.
Single Bipolar Transistors Replacement Considerations
The datasheet identifies the 2SA1871 as the complementary PNP transistor for paired applications. No other direct substitute part numbers are documented in the provided source material.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
