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The CEL NE68118 is an NPN epitaxial silicon transistor from the NE681 series, registered as EIAJ 2SC5007. It is designed for low noise and high gain amplifier applications up to 4 GHz. Key electrical characteristics include a gain bandwidth product (fT) of 9.0 GHz at VCE=8V, IC=20mA, and a noise figure of 1.4 dB at 1 GHz with VCE=8V, IC=7mA. The device features a maximum collector current of 65 mA and total power dissipation of 150 mW in its surface mount package.
Verify the specific package outline number corresponding to the desired form factor, as the NE681 series spans chip and various SMT packages. Confirm that the design utilizes components within recommended operating limits, noting that certain part numbers in this series are not recommended for new designs; consult manufacturer sales for updated guidance on legacy or restricted variants.
Select based on required noise figure and gain specifications at the target operating frequency. Ensure bias conditions align with typical performance curves, as gain and noise vary significantly with collector current. Consider thermal resistance constraints when determining power dissipation capabilities in the chosen package style.
This component belongs to the NEC/CEL NE681 series of NPN silicon transistors. It shares core device physics with other series members like NE68133 and NE68135, differing primarily in packaging and associated parasitic elements. The 2SC5007 designation identifies the specific surface mount variant within this family.
Direct substitutes within the same series include NE68133 and NE68135, though package dimensions and pinout configurations differ. Verify compatibility with existing PCB footprints before substitution. Other high-frequency NPN transistors may require significant circuit redesign due to differing impedance and noise characteristics.