SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CEL 2SC5013-A is an NPN epitaxial silicon RF bipolar junction transistor designed for high-frequency applications. It features a typical transition frequency (fT) of 10 GHz, ensuring effective operation in microwave ranges. The device offers a low noise figure of 1.8 dB and a gain of 9.5 dB, making it suitable for sensitive signal amplification. It operates with low voltage requirements and dissipates up to 150 mW of power. Packaged in a compact SOT-343 surface-mount format, this component integrates high gain bandwidth with minimal noise characteristics for efficient circuit design.
Verify the specific manufacturer source, as lifecycle status may vary between obsolete and new stock depending on the supplier. Confirm package integrity and pinout alignment with SOT-343 specifications before integration. Ensure compatibility with existing RF circuit parameters, particularly regarding voltage limits and thermal dissipation requirements for reliable performance.
Select this component when a high-frequency NPN transistor with low noise characteristics is required for RF applications. Consider its 10 GHz transition frequency and 1.8 dB noise figure for signal integrity needs. Evaluate the SOT-343 package size against board space constraints. Compare gain and power dissipation metrics against alternative transistors to ensure optimal circuit efficiency and thermal management.
This part belongs to the family of NPN epitaxial silicon RF transistors from CEL. It shares functional similarities with other high-frequency bipolar devices but is distinguished by its specific fT rating and noise profile. The 2SC5013 series typically targets applications requiring stable performance in microwave frequencies with minimal signal degradation.
Public confirmed substitute part numbers are not available in the provided documentation.