2SC5013-A

2SC5013-A

  • Description:RF TRANS NPN 10V 10GHZ
  • Series:-

SKU:15c16cd463bd Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 2GHz
  • Gain:9.5dB
  • Power - Max:150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 6V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Download product information

2SC5013-A

Overview

The CEL 2SC5013-A is an NPN epitaxial silicon RF bipolar junction transistor designed for high-frequency applications. It features a typical transition frequency (fT) of 10 GHz, ensuring effective operation in microwave ranges. The device offers a low noise figure of 1.8 dB and a gain of 9.5 dB, making it suitable for sensitive signal amplification. It operates with low voltage requirements and dissipates up to 150 mW of power. Packaged in a compact SOT-343 surface-mount format, this component integrates high gain bandwidth with minimal noise characteristics for efficient circuit design.

Feature Summary

  • High transition frequency capability for microwave range operations
  • Low noise figure optimized for sensitive signal reception
  • Compact surface-mount packaging for space-constrained designs

Applications

  • RF signal amplification stages
  • Microwave communication systems
  • Low-noise amplifier circuits

Procurement Notes

Verify the specific manufacturer source, as lifecycle status may vary between obsolete and new stock depending on the supplier. Confirm package integrity and pinout alignment with SOT-343 specifications before integration. Ensure compatibility with existing RF circuit parameters, particularly regarding voltage limits and thermal dissipation requirements for reliable performance.

Selection Notes

Select this component when a high-frequency NPN transistor with low noise characteristics is required for RF applications. Consider its 10 GHz transition frequency and 1.8 dB noise figure for signal integrity needs. Evaluate the SOT-343 package size against board space constraints. Compare gain and power dissipation metrics against alternative transistors to ensure optimal circuit efficiency and thermal management.

Part Context

This part belongs to the family of NPN epitaxial silicon RF transistors from CEL. It shares functional similarities with other high-frequency bipolar devices but is distinguished by its specific fT rating and noise profile. The 2SC5013 series typically targets applications requiring stable performance in microwave frequencies with minimal signal degradation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2SC5013-A2SC5013-A

Click on the inquiry