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Product Detailed Parameters
- Description：RF TRANS NPN 6V 12GHZ
- Series：-
- Mfr：CEL
- Package：Strip
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：6V
- Frequency - Transition：12GHz
- Noise Figure (dB Typ @ f)：1.5dB @ 2GHz
- Gain：11dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：75 @ 10mA, 3V
- Current - Collector (Ic) (Max)：30mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The CEL 2SC5015-A is a surface-mount NPN silicon high-frequency transistor, corresponding to the NE68518 part number in the NE685 series. It features a gain bandwidth product (fT) of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz. The device operates with a collector-to-emitter voltage of 6 V and a maximum collector current of 30 mA. Total power dissipation is rated at 150 mW. It utilizes an EIAJ registered package outline 18 (SOT-343 style).
Feature Summary
- High gain bandwidth product suitable for ultra-high frequency applications.
- Low noise figure optimized for sensitive receiver front-ends.
- Designed for low voltage and low current operation in portable devices.
Applications
- Portable wireless communications equipment
- Cellular radio applications
- Low noise amplifier circuits up to 2.4 GHz
Procurement Notes
Verify the manufacturer source and authenticity before purchase. Confirm that the component matches the specific NE68518/2SC5015 designation. Check for ESD sensitivity handling requirements during storage and assembly. Ensure the package type aligns with the SOT-343 outline dimensions.
Selection Notes
Select this component for designs requiring high fT and low noise in compact surface-mount formats. Compare against other NE685 series variants like NE68519 or NE68530 if different package sizes or bias conditions are required. Ensure the operating frequency and voltage levels remain within the specified absolute maximum ratings.
Part Context
This component belongs to the NEC/CEL NE685 series of high-frequency NPN silicon transistors. The 2SC5015-A designation corresponds specifically to the NE68518 variant within this family. These devices were engineered for cost-effective integration into mobile communication hardware requiring small footprints.
Replacement Considerations
Direct substitutes within the same series include NE68519, NE68530, NE68533, and NE68539. Verify package compatibility and electrical parameter overlaps when considering these alternatives for existing designs.
