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The CEL 2SC5015-T1-A is an NEC NE685 series surface-mount NPN silicon high-frequency transistor. It features a gain bandwidth product of 12 GHz and a minimum noise figure of 1.5 dB at 2.0 GHz. The device supports low voltage operation with a collector-emitter voltage of 6 V and a collector current of 30 mA. Total power dissipation ranges from 125 mW to 180 mW depending on the package variant. It utilizes small outline packages including SOT-343, SOT-23, and SOT-143 styles.
Verify the specific package outline number (18, 19, 30, 33, or 39) corresponding to the required mechanical form factor. Confirm that the design does not utilize the restricted part numbers listed in the datasheet header. Ensure proper ESD handling procedures are implemented during assembly due to device sensitivity.
Select the appropriate package variant based on thermal requirements and board space constraints. The NE68518 uses SOT-343 style, while NE68533 uses SOT-23 style. Verify bias conditions against the typical scattering parameters and noise figures provided for specific collector currents and voltages to ensure optimal circuit performance.
The 2SC5015-T1-A corresponds to the NEC NE68518 part within the California Eastern Laboratories NE685 series. This series comprises several surface-mount NPN silicon transistors designed for high-frequency applications. The component is manufactured using silicon technology and is intended for use in low-cost, high-gain, low-noise RF circuits.
Direct substitutes include other members of the NE685 series such as NE68519, NE68530, NE68533, and NE68539, which share similar electrical characteristics but differ in package outlines. Cross-reference with the specific package type required for the application.
The absolute maximum rating for collector-emitter voltage (VCEO) is 6 V.
No, the datasheet explicitly states that certain part numbers from the NE685 series are not recommended for new design and advises contacting the sales office for details.
The minimum noise figure (NFMIN) is typically 1.5 dB when measured at VCE = 3 V, IC = 3 mA, and f = 2.0 GHz.